Journal Sciences News
The Spine Journal
October 2018
Halloysite and sepiolite –TiO2 nanocomposites: Synthesis characterization and photocatalytic activity in three aquatic wastes
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): D. Papoulis, D. Panagiotaras, P. Tsigrou, K.C. Christoforidis, C. Petit, A. Apostolopoulou, E. Stathatos, S. Komarneni, I. Koukouvelas Two different nanoclay minerals were combined with nanophase anatase TiO2 for the synthesis of clay-based nanocomposites for improved photocatalytic properties. A new Halloysite (Hal) + Sepiolite (S) - TiO2 ternary nanocomposite was prepared using halloysite from Utah, USA and a recently discovered sepiolite from Greece. Three nanocomposites were synthesized with Hal-TiO2, S-TiO2 and [Hal+S] to TiO2. As a result, TiO2 particles (anatase) were homogeneously deposited and dispersed on the clay surfaces. Phase composition, particle morphology and physical properties of these nanocomposites were characterized by XRD, ATR-FTIR, FE-SEM, DRS-UV–Vis and N2-sorption/desorption isotherms at 77
October 2018
Light-induced oxygen sensing using ZnO/GO based gas sensor
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Yousef Khosravi, Mahdi Sasar, Yaser Abdi We report gas sensing properties of a novel room temperature sensor based on ZnO nanowires and reduced graphene oxide (GO) sheet under UV and visible light exposure. The proposed sensor operates based on the photocurrent response of the ZnO/GO heterostructure and the photocatalytic reduction of GO. ZnO nanowires were deposited on interdigitated Au electrodes and the GO sheet was deposited on the ZnO nanowires by dip coating. Under UV light illumination, the fabricated device shows an enhanced sensitivity to different concentrations of oxygen gas. Oxygen adsorption/desorption on the surface of the ZnO nanowires and on the exposed surface of the GO sheet contribute to the decay and the growth of the photocurrent. We analyze the transient photocurrents using stretched exponential functions, showing that the specific times and the exponents of these fits are excellent candidates for distinguishing different ppm of oxygen gas in the medium. Because of oxygen vacancies and other defects in the ZnO nanowires, the sample is seen to show response to visible light. We study the case of visible light and show that once again the sample shows clear sensitivity to different concentrations of oxygen gas.
October 2018
How topographical surface parameters are correlated with CdTe monocrystal surface oxidation
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s):
October 2018
The role of thermal annealing in controlling morphology, crystal structure and adherence of dip coated TiO2 film on glass and its photocatalytic activity
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Hamid Kazemi Hakki, Somaiyeh Allahyari, Nader Rahemi, Minoo Tasbihi In this paper, sol–gel technique with dip coating was used to prepare photocatalytic TiO2 coatings on glass plates. Effect of different calcination temperatures of 400, 500, 600 and 700
October 2018
Role of thermal treatment on sol-gel preparation of porous cerium titanate: Characterization and photocatalytic degradation of ofloxacin
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Wenjie Zhang, Jiao Yang, Chuanguo Li CeTi2O6 was prepared using PEG4000 as template agent in a sol-gel route. Crystallization of brannerite structured CeTi2O6 begins at 700
October 2018
Tuning effect of Sn doping on structural, morphological, optical, electrical and photocatalytic properties of iron oxide nanoparticles
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): P. Sangaiya, R. Jayaprakash The pure and tin-doped iron oxide nanoparticles were synthesized by using the microwave irradiation method by varying the different wt% of Sn. Samples with better quality were prepared using 0.1
October 2018
Enhanced photocatalytic performance of silver–based solid solution heterojunctions prepared by hydrothermal method
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Maocai Zhang, Shifeng Zhao, Qingshan Lu Silver–based solid solution with phase heterojunctions (
October 2018
Anchoring of ZnO nanoparticles on exfoliated MoS2 nanosheets for enhanced photocatalytic decolorization of methyl red dye
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Rajeswari Rathnasamy, Manikandan Santhanam, Viswanathan Alagan In this work, a facile method has been employed for the decoration of ultrafine ZnO nanoparticles over the exfoliated MoS2 nanosheets (ZnO-MoS2 composite) for the decolorization of methyl red dye under solar light irradiation. Further, the exfoliation of MoS2 nanosheets from bulk MoS2 powder and synthesis of pure ZnO nanoparticles was also demonstrated. Then, the prepared different photocatalyst materials have been characterized using various analytical techniques. The formation of ZnO and exfoliation of MoS2 in the composite has been evidently confirmed by XRD, FT-IR and Raman spectroscopic analysis. HR-TEM analysis clearly revealed the formation of ultrafine ZnO nanoparticles that are anchored on the exfoliated MoS2 nanosheets. In addition, the size of ZnO nanoparticles in the composite was significantly reduced compared to bare ZnO nanoparticles since the presence of MoS2 nanosheets which hinders the growth of ZnO nanoparticles. Due to the synergistic interaction between ZnO nanoparticles and exfoliated MoS2 nanosheets, the prepared composite exhibits superior photocatalytic activity towards the decolorization of methyl red dye up to 89% after 60
October 2018
Influence of small size pyramid texturing on contact shading loss and performance analysis of Ag-screen printed mono crystalline silicon solar cells
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Minkyu Ju, Kumar Mallem, Subhajit Dutta, Nagarajan Balaji, Donghyun Oh, Eun-Chel Cho, Young Hyun Cho, Youngkuk Kim, Junsin Yi Front side textured random pyramids are widely utilized in major industries for the performance enhancement of crystalline silicon (c-Si) solar cells. Random pyramids not only reduce the surface reflectance but also improve the light trapping effect. Therefore, it is necessary to understand the pyramid height affecting the cell performance, further improving cell efficiency. In this work, we present an experimental study to investigate the influence of pyramids size on the contact shading loss mechanism of silver (Ag) screen-printed p-type c-Si solar cells. Three alkaline texture solutions with sodium silicate additives were optimized to develop the small pyramid (0.5–2.0
October 2018
Improvement of the photocatalytic hydrogen production activity of g-C3N4 by doping selenides as cocatalysts
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Dou-Dou Yang, Xiao-Jun Sun, Hong Dong, Xin Zhang, Hong-Liang Tang, Jing-Li Sheng, Jin-Zhi Wei, Feng-Ming Zhang Carbon nitride is emerging as leading candidate for photocatalyst which enables one to use light to drive hydrogen production reactions. However, noble-metal such as Pt was adopted to be effective co-catalyst to increase the activity of g-C3N4 in most reactions which is costly. Herein, a novel g-C3N4-based photocatalyst with NiSe2 and CoSe2 as cocatalysts (abbreviated as CN-CoNiSe) in absence of noble-metal applied in photocatalytic hydrogen production was devised with a lamellar structure through a calcination process of the mixture of Ni2+ doped ZIF-67 and g-C3N4 for the first time in this work. The optimum photocatalytic activity in hydrogen evolution for CN-CoNiSe photocatalysts with a Ni2+ doped ZIF-67 mass content in precursors of 5
October 2018
Effect of rapid thermal annealing on bulk micro-defects and plastic deformation in silicon during high temperature processing
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Jung Gyu Jung, Kisang Lee, Boyoung Lee, Ho Seong Lee We studied how rapid thermal annealing (RTA) affects bulk micro-defects (BMDs) and plastic deformation in Si wafers processed at high temperatures. BMDs caused by oxygen precipitation at 1200
September 2018
Vertical CuO nanowires array electrodes: Visible light sensitive photoelectrochemical biosensor of ethanol detection
Publication date: October 2018
Source:Materials Science in Semiconductor Processing, Volume 85 Author(s): Weiting Zhan, Zhe Chen, Ji Hu, Xiongjie Chen Photoelectrochemical (PEC) sensing using visible light has attracted great attention for high sensitivity with low undesired background noise. A CuO electrode with nanowires on Cu foil was synthesized by thermal oxidation and the devices was used to explore the PEC sensing for ethanol detection under visible light. The morphology, composition, optical, and PEC properties of CuO nanowires have been systematically investigated. The results showed that the CuO nanowires were present on the top surface of specimens with single phase and the thick interface layer were made of Cu2O between CuO nanowires and Cu foil substrate. The CuO nanowires on surface contained two types of nanowire (bend CuO Nws and vertical CuO Nws). With the temperature increasing, the Nws of first type decreased, and the Nws of second type started to increase. When the Cu foil were annealed at 700
September 2018
Editorial Board
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84

September 2018
Chemically derived Zn0.90-xMn0.05Fe0.05AlxO thin films: Tuning of crystallite/grain size, optical and dielectric constants and ferromagnetic properties through Al substitutions
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Y. Babur, A. Tumbul, M. Y
September 2018
Effects of Ni-doping on the photo-catalytic activity of TiO2 anatase and rutile: Simulation and experiment
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Mohammad Reza Elahifard, Seyedsaeid Ahmadvand, Amir Mirzanejad The Ni impurity has an inconsistent impact on the photo-catalytic activity of TiO2 in different regions of electromagnetic radiation. In this work, the effect of different concentrations of Ni doping into anatase and rutile TiO2 structures is investigated theoretically and experimentally. Doubling the concentration of doped Ni does not change the photo-catalytic activity of TiO2 significantly according to photo-degradation of Acid Blue 92 (AB 92) under ultra violate and visible (UV–Vis) lights. However, increment of the dopant concentration enhances the thermodynamic yield of TiO2 crystalline structure (i.e. rutile) at low temperature calcination of TiO2. Density functional theory (DFT) calculations also confirm the impact of Ni impurity on the higher stability of rutile phase. Computational geometry optimization favors a heterogeneous distribution of Ni atoms in 12.5 at% Ni-TiO2, that is verified by a broad impurity peak inside the band gap of TiO2 in UV–Vis diffuse reflectance spectrum (UV–Vis DRS). The DRS and DFT results denote a negligible change in the band gap energy of TiO2 compared to Ni-TiO2. Based on DFT results, generation of defect states gives rise to photo-catalytic activities of Ni-TiO2 in the invisible region. However, adding Ni to anatase TiO2 changes the type of the band gap from indirect to direct and reduces its photo-efficiency in the degradation of AB 92 under UV irradiation. In addition, a positive shift of the valance and conduction band edges of TiO2 occurs after Ni doping, which reduces the photo-oxidation activity of TiO2.
September 2018
Preparation of high-density InGaZnO4 target by the assistance of cold sintering
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Jiang-An Liu, Chen-Hui Li, Jing-Jing Shan, Jia-Ming Wu, Ru-Feng Gui, Yu-Sheng Shi In this study, near stoichiometric InGaZnO4 (IGZO) nano-powders were synthesized by a multistep precipitation method with the ammonia solution used as precipitant at 10
September 2018
Effect of post-annealing on the properties of Co-doped ZnO thin films deposited by channel-spark ablation
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Asghar Ali, Redhouane Henda In this study, we report on the effect of post-annealing treatment on the structure and morphology of Co-doped ZnO (CZO) thin film nano-composites deposited on Si (100) by channel-spark pulsed electron beam ablation (PEBA) from a single target, CoxZn1-xO (x
September 2018
Enhanced photocatalytic performance of visible-light active graphene-WO3 nanostructures for hydrogen production
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Muhammad Bilal Tahir, Ghulam Nabi, N.R. Khalid In this article, visible light driven graphene-WO3 (WG) photocatalysts have been synthesized through facile hydrothermal process for H2 evolution through water splitting under visible light illumination. For comparison, neodymium-WO3 nanostructure was also prepared. The as-synthesized composites were characterized by XRD, SEM, BET, EDX, XPS, UV–vis absorption spectra and Photoluminescence (PL) emission spectroscopy. Experimental results showed that WG-7 composite (7% graphene content into WO3) had excellent photocatalytic performance (rate of H2 evolution 288/µmol
September 2018
Electronic structures and optical properties of Cu1-xAgxInTe2 (x
September 2018
Photocatalytic activities of silver compound modified activated carbon@ZnO: Novel ternary composite visible light-driven photocatalysts
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Pongsaton Amornpitoksuk, Sumetha Suwanboon, Chamnan Randorn Novel ternary photocatalysts composed of silver compound (SC), activated carbon (AC), and zinc oxide (ZnO) were prepared via the deposition of silver compounds; AgCl, AgBr, AgI and Ag3PO4 on the surface of flower-like AC@ZnO. The photocatalytic experiment of the degradation of methylene blue and reactive orange under visible light irradiation showed that the ternary composite of SC/AC@ZnO was more active than AC@ZnO and ZnO. The results of an inhibitory activity experiment using scavengers confirmed that the superoxide anion radical is the main reactive species of the system.
September 2018
Luminescence properties of YVO4: Ln (Ln = Dy3+, Eu3+, Tm3+) for white LED by hydrothermal method
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Jingyu Shao, Chunpeng Liu, Xuan Zhou, Luying Hong, Jinghui Yan, Zhenhui Kang YVO4: Dy3+, Eu3+ / YVO4: Dy3+, Eu3+, Tm3+ phosphors were synthesized by a simple hydrothermal method. The energy transfer from Dy3+ to Eu3+ was determined by photoluminescence (PL) spectra and fluorescence lifetime. The energy transfer mechanism from Dy3+ to Eu3+ was confirmed. The amount of Eu3+ in YVO4: 0.01Dy3+, Eu3+ with strong emission and small size was determined by applied ratio, and finally a white light (0.300, 0.317) output was achieved in YVO4: 0.01Dy3+, 0.01Eu3+, 0.03Tm3+ by adjusting the amount of activator ions. Thus the sample with the above characteristics has a promising application prospect in the light emitting diode (LED).
September 2018
A theoretical study on the metal contacts of monolayer gallium nitride (GaN)
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Rui Sun, Guofeng Yang, Fuxue Wang, Guangyong Chu, Naiyan Lu, Xiaowen Shen Low-Schottky barrier height (SBH) metal contacts to 2D materials is indispensable for achieving high performance in atomic layer 2D materials channel based optoelectronic devices. In this study, we systematically investigate the detailed face contact properties of monolayer (ML) hexagonal gallium nitride (GaN) with six different commonly used metals (Au, Ag, Pd, Pt, Ti, and Ni) in field-effect transistors (FETs) utilizing the first principles electronic structure calculations based on density functional theory (DFT). It is found that no tunnelling barriers (TB) exist in all the ML GaN-metal face contact systems by calculating and analyzing the average effective potentials (Veff). Moreover, ML GaN undergoes a vanishing of Schottky barriers in the vertical interfaces by analyzing the binding energy, electron localization function (ELF), and projected state density (PDOS) of six contact combinations. In terms of the energy band calculation, ML GaN forms n-type Schottky contacts with Au, Pd, Pt and Ti electrodes, and an n-type ohmic contacts with Ag electrode, while a p-type ohmic contact with Ni electrode is obtained in the lateral interfaces. The results would provide an insight into the ML GaN-metal interfaces, and be beneficial for developing low dimensional GaN-based devices with high performance.
September 2018
Chemically synthesized ZnO-Bi2O3 (BZO) nanocomposites with tunable optical, photoluminescence and antibacterial characteristics
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Tariq Jan, Sohail Azmat, Bareera Wahid, M. Adil, Hussain Alawadhi, Qaisar Mansoor, Zahid Farooq, S.Z. Ilyas, Ishaq Ahmad, Muhammad Ismail This study unravels the soft chemical synthesis of Bi2O3/ZnO (BZO) nanocomposites having nano-cones like morphology with tunable optical and luminescent properties. The prepared BZO samples with varying Bi2O3 concentrations have been characterized for structural, morphological, band gap energy, photoluminescence (PL) and antibacterial characteristics. Structural and morphological investigations revealed the separate single wurtzite phase of ZnO and monoclinic phase of Bi2O3 without any undesired phases with dominant nano-cones like morphology. Optical and PL analysis have depicted the band gap widening, enhanced ultra-violet (UV) emission and decreased defects densities of BZO nanocomposites as compared to pristine ZnO nano-cones. Interestingly, a good correlation between defects and antibacterial activity of ZnO nanostructures has been found.
September 2018
Temperature-dependent structural transition, electronic properties and impedance spectroscopy analysis of Tl2InGaS4 crystals grown by the Bridgman method
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): A.F. Qasrawi, Qotaibah A. Alkarem, N.M. Gasanly In this work, we report the temporary structural modifications associated with the in situ heating of the Tl2InGaS4 crystals in the temperature range of 300–420
September 2018
Improved electrochemical performance of Mn3O4 thin film electrodes for supercapacitors
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Dadamiah P.M.D. Shaik, P. Rosaiah, K. Sivajee Ganesh, Yejun Qiu, O.M. Hussain Fabrication of the Mn3O4 thin film electrodes is an important area of research for the development of supercapacitors. Investigations were made to improve the electrochemical properties of the electron beam evaporated Mn3O4 films. The films grown on stainless steel substrates at a substrate temperature of 473
September 2018
Optical and electrical properties of H2 plasma-treated ZnO films prepared by atomic layer deposition using supercycles
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Prakash Uprety, Bart Macco, Maxwell M. Junda, Corey R. Grice, Wilhelmus M.M. Kessels, Nikolas J. Podraza High mobility H-doped ZnO (ZnO:H) thin films are prepared on thermal oxide coated silicon wafers by a novel supercycle approach of thermal atomic layer deposition (ALD) technique. The influence of H2 plasma treatment and substrate composition on optical and electrical properties of ZnO films are studied using spectroscopic ellipsometry (SE) and direct electrical measurements. This work significantly expands the measured range of ZnO:H optical properties into the far infrared to obtain the complex dielectric function (
September 2018
In situ growth of CuSbS2 thin films by reactive co-sputtering for solar cells
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Liangliang Kang, Lianbo Zhao, Liangxing Jiang, Chang Yan, Kaiwen Sun, Boon K. Ng, Chunhui Gao, Fangyang Liu CuSbS2 thin films were in situ grown by reactive co-sputtering and the effects of the growth temperature on film composition, structure and morphology were investigated. It is demonstrated that orthorhombic chalcostibite CuSbS2 thin films with uniform morphology, pure phase and grain size over 2
September 2018
Optimization of nanometer bulk junctionless Trigate FET using gate and isolation dielectric engineering
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): S. Priscilla Scarlet, R. Srinivasan In this paper, the performance of bulk junctionless trigate FET is enhanced by optimizing the (WFISO) GateISO work function (GateISO is the portion of the gate above isolation dielectric), isolation dielectric permittivity (KISO), and GateFIN dielectric (GateFIN is the portion of the gate covering the fin) permittivity(KFIN). SiO2, Si3N4 and HfO2 dielectrics with gate work functions in the range of 4–5.6
September 2018
Impurity band conduction in Mn-doped p type InAs single crystal
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Guiying Shen, Youwen Zhao, Yongbiao Bai, Ding Yu, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Fengyun Yang, Fenghua Wang The electrical transport properties of Mn doped InAs single crystal (InAs:Mn) were determined from temperature-dependent Hall effect measurements over the temperature range of 77–300
September 2018
Super-resolution GaAs nano-structures fabricated by laser direct writing
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Wei Zhang, Zhenwu Shi, Chen Chen, Xinning Yang, Linyun Yang, Zhongming Zeng, Baoshun Zhang, Qian Liu Nanostructures have been applied in various semiconductor devices. However, current nanostructure fabrication technologies always have such or that shortages, stimulating a need for new technology with simple fabrication, high efficiency and low cost. In this paper, we present super-resolution nanostructure fabrication based on laser ablation effects by using laser direct writing technique. GaAs nanostructures including nano-holes, nano-grooves and gratings have been fabricated. The depths and full widths at half maximum of nano-grooves show linear dependence on laser power and pulse duration. The minimum full width at half maximum of grating groove reaches to 32
September 2018
Strategic improvement of Cu2SnS3 thin film by different heating rates and photoluminescence investigation
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Yuchen Dong, Xiaoshuang Lu, Peng Shen, Ye Chen, Fangyu Yue, Pinghua Xiang, Lin Sun, Pingxiong Yang, Junhao Chu Cu2SnS3 (CTS) thin films have been synthesized on molybdenum-coated soda lime glass substrates by sulfurization the Cu-Sn alloy precursors grown by radio-frequency magnetron sputtering technique. Strategic improvement has been carried out on the composition, structural, morphological and optical properties of CTS thin films sulfurized by rapid heating rate and slow heating rate. The annealing heating rate can adjust the ratio of Cu/Sn, improve the crystallinity and surface morphology. The ratio of Cu/Sn is close to the stoichiometric composition of CTS under slow heating rate with more loss of Sn. Structural characterization exhibits the CTS thin film sulfurized by slow heating rate has a better crystallinity without secondary phase. The CTS thin film obtained at slow heating rate presents a larger average grain size and smooth surface. The optical band gap of CTS thin films is at the vicinity of 0.87
September 2018
Influence of cobalt doping on residual stress in ZnO nanorods
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Amrit Kaphle, Mario F. Borunda, Parameswar Hari Cobalt-doped (0%, 5%, 10%, 15%, and 20%) zinc oxide (ZnO) nanorods were deposited on silicon wafers by a chemical bath deposition technique. Variations in energy band gap and stress due to cobalt doping were analyzed by X-ray diffraction techniques, optical measurements and modeled by density functional theory calculations. Also, the direct residual stress in ZnO nanorods was investigated by measuring the difference in curvature across the doped ZnO thin films deposited on a silicon substrate using the Bow Optic wafer stress measurement system. The stress in doped ZnO films was found to be of compressive in nature. The residual stress in doped ZnO thin films was found in the range of 0.0427–1.0174
September 2018
Large-grained Sb2S3 thin films with Sn-doping by chemical bath deposition for planar heterojunction solar cells
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): U. Chalapathi, B. Poornaprakash, Chang-Hoi Ahn, Si-Hyun Park Herein, the growth of large-grained and compact Sb2S3 thin films with good electrical properties by Sn doping using a chemical bath deposition (CBD) and annealing approach is detailed. Sn-doped Sb2S3 thin films were prepared using the CBD method with SbCl3, SnCl2.2H2O, and Na2S2O3 as source materials, and ethylenediamine tetraacetic acid (EDTA) as the complexing agent at 40 ° C for 3
September 2018
SU-8 nano-nozzle fabrication for electrohydrodynamic jet printing using UV photolithography
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Jili Wang, Zhifu Yin Efforts to directly printing nanoscale patterns by electrohydrodynamic jet for demanding device applications in electronics, medicine, and biotechnology have grown rapidly in recent years. However, printing of nano-patterns significantly depends on the fabrication of nanoscale nozzles. Here, we describe a low-cost and concise method for fabrication of SU-8 nano-nozzles only based on traditional UV photolithography. By this method, thermal and volume-shrinkage induced nanoscale crack can be automatically formed due to stress release after developing step. The influence of material, SU-8 layer thickness, and exposing duration on the stress in the SU-8 layer was analyzed to fabricate straight and long nano-crack. The result shows that the suitable material, SU-8 layer thickness, and exposing duration are silicon, 70
September 2018
The effect of Ag dopant on MgO nanocrystallites grown by SILAR method
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Harun G
September 2018
Mesoporous CeO2 nanoparticles modified Glassy carbon electrode for individual and simultaneous determination of Cu(II) and Hg(II): Application to environmental samples
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Prashanth Shivappa Adarakatti, Vijayakumar Gangaiah, Ashoka Siddaramanna An electrochemical sensor based on the use of CeO2 nanoparticles modified glassy carbon electrode (CeO2/GCE) was prepared and applied for determination of Cu(II) and Hg(II) individually and simultaneously. The differential pulse anodic stripping voltammetry (DPASV) results indicates that the CeO2 NPs based sensor exhibits good electroanalytical performance with two well-resolved voltammetric stripping peaks for Cu(II) and Hg(II). The proposed CeO2 NPs based sensor shows a wide linear range from 10 to 350
15 August 2018
Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer
Publication date: September 2018
Source:Materials Science in Semiconductor Processing, Volume 84 Author(s): Quanli Tao, NuoFu Chen, Congjie Wang, Ma Dayan, Yiming Bai, Jikun Chen The highly crystallized Ge films have been fabricated by magnetron sputtering and thermal annealing on silicon substrate with a graphite buffer layer which can reduce the lattice mismatch and thermal mismatch. In this paper, we demonstrate the effects of substrate temperature and annealing parameters on Ge film quality through XRD and Raman measurements. The mechanism of the Ge films crystallization during the annealing process is analyzed using the lowest energy principle and the law of Bravais.
15 August 2018
Editorial Board
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83

15 August 2018
Fe-modified perovskite-type NaMgF3 photocatalyst: Synthesis and photocatalytic properties
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Kun Nie, Hanpei Yang, Zhao Gao, Junming Wu Fe-modified perovskite-type NaMgF3 photocatalysts were synthesized via a microemulsion method followed by calcinations. The as-prepared catalysts were characterized via X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Brunauer–Emmett–Teller specific surface areas (BET) measurements, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV–vis diffuse reflectance spectroscopy (UV–vis DRS), and Photoluminescence spectroscopy (PL). The photocatalytic activity of as-prepared materials was obtained via degradation of aqueous Rhodamine B. Results demonstrate that the Mg2+ in NaMgF3 may be substituted by a low amount of Fe3+, forming a finite solid solution NaMg1-xFexF3(x
15 August 2018
Production and annealing of the paramagnetic defects in as-grown and oxygen doped floating zone silicon irradiated with high fluence 3.5
15 August 2018
Mg thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): J.D. Hwang, J.S. Lin, S.B. Hwang By magnesium (Mg) atom diffusion in ZnO layer, the detection band of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors (MSM-PDs) could be modulated from two distinct bands to one band. ZnO and MgxZn1-xO layers were deposited consecutively on a sapphire substrate using an radio-frequency magnetron sputtering system. With increasing annealed temperature, Mg atoms diffuse from MgxZn1-xO into the underlying ZnO layer, which tunes the composition of ZnO into MgyZn1-yO and thus modulate the detection band of MSM-PDs. For the annealed temperature below 900
15 August 2018
Rear-surface line-contact optimization using screen-print techniques on crystalline solar cells for industrial applications
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Jiajer Ho, Te-Chun Wu, Jyh-Jier Ho, Chih-Hsiang Hung, Sung-Yu Chen, Jia-Show Ho, Song-Yeu Tsai, Chau-Chang Chou, Chi-Hsiao Yeh This paper explores the utility of single-crystalline silicon solar cells that are treated with the screen-print technique to implement line contacts at the cells’ rear surfaces. We designed rear-surface line-contact (RSLC) solar cells using screen-print methods on n-type wafers (125
15 August 2018
Impact of isotropic strain on electronic and magnetic properties of O-adsorbed SiC monolayer
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Min Luo, Yu-E. Xu, Yu-Xi Song Electronic and magnetic properties of two-dimensional (2D) silicon carbide (SiC) with the O adatom have been studied by the first-principles calculations. Different adsorption sites have been investigated. Magnetism is observed, while the O adatom binds to Si or situates in the middle of hexagons. We further study the effects of strain on the magnetism in the O-adsorbed 2D-SiC, we apply an isotropic tensile and compressive strain on the system. On the basis of our calculations, tunable magnetism shows as the strain increases. The analysis of the PDOS shows that the p-p hybridization between O and C/Si atoms results in such magnetic behavior. Moreover, under the compressive strain, the O-adsorbed SiC monolayer could transfer from semimetal to metal states. The adsorption of the O atom might show potential applications in SiC-based nanoscale devices.
15 August 2018
Effects of interfacial layer-by-layer nanolayers on the stability of the Cu TSV: Diffusion barrier, adhesion, conformal coating, and mechanical property
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Daekyun Jeong, Rahim Abdur, Young-Chang Joo, Jae-il Jang, Pil Ryung Cha, Jiyoung Kim, Kyeong-Sik Min, Jaegab Lee The Through-Silicon (Si) Via (TSV) is the integration technology for three-dimensional integrated-circuit packaging. The layer-by-layer (LbL) technique has been used to deposit flexible poly(allylamine) hydrochloride (PAH)/polystyrene sulfonate (PSS) multilayers inside scalloped Si trenches of a high aspect ratio, fabricated by the Bosch-etching process. An outstanding control of the thickness and the conformality of the polymer layers, along with a significantly improved planarization, was achieved due to the LbL-technique self-termination effects. In addition, the basic properties of the polymer layers have been characterized: diffusion-barrier properties, adhesion, density, and elastic modulus. The results of this study demonstrate the feasibility of LbL multilayers regarding the TSV liner for the vertical interconnect accesses with a high aspect ratio of highly scalloped surface walls.
15 August 2018
Structure, optical, electrical and thermoelectric properties of solution-processed Li-doped NiO films grown by SILAR
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): N.P. Klochko, K.S. Klepikova, D.O. Zhadan, S.I. Petrushenko, V.R. Kopach, G.S. Khrypunov, V.M. Lyubov, S.V. Dukarov, V.O. Nikitin, M.O. Maslak, A.Yu. Zakovorotniy, A.L. Khrypunova The article presents a new facial synthesis of Li-doped NiO films (NiO:Li) via an easy and cost-effective method Successive Ionic Layer Adsorption and Reaction (SILAR) with the processing of the obtained NiO films in a lithium-containing aqueous solution for their transformation after annealing into NiO:Li layers. Comparative analysis of crystal structure, optical, electrical and thermoelectric properties of the obtained NiO and NiO:Li 420-1050
15 August 2018
Improved structural properties, morphological and optical behaviors of sprayed Cu2ZnSnS4 thin films induced by high gamma radiations for solar cells
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Mehdi Souli, Chayma Nefzi, Zeineb Seboui, Arbi Mejri, Ruxandra Vidu, Najoua Kamoun-Turki Cu2ZnSnS4 (CZTS) thin films have been synthesized by spray pyrolysis technique, deposited on glass substrates and then irradiated by high gamma radiations. Six gamma radiation doses have been applied: 10, 20, 30, 40, 50 and 100
15 August 2018
Study on characterization method of optical constants of germanium thin films from absorption to transparent region
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Huasong Liu, Shida Li, Peng Sun, Xiao Yang, Dandan Liu, Yiqin Ji, Feng Zhang, Deying Chen, Yuping Cui In this paper, the physical dispersion model of the optical constants of the amorphous germanium thin films was studied. Based on the Cody-Lorentz model, the optical constants of the films are characterized from the visible region to the long-wave infrared region. The optical constants are calculated from the inverse calculation of the reflection spectrum and the transmission spectrum in visible region. The calculated optical constants are extended to the infrared transparent region of the germanium thin films, which is consistent with the actual measurement results. The calculated optical constants are verified by the Cauchy model in the transparent region. According to the properties of band gap and tail width, the physical mechanism why the refractive index and extinction coefficient of films is greater than that of bulk material was determined. The decay rate of the germanium film in the long wave direction is lower than that of the germanium crystal due to the presence of the tail state in the germanium film material. Therefore, the refractive index and extinction coefficient of the film are greater than those of the bulk material.
15 August 2018
Electron transport in surface modified TiO2 nanoparticles
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): V. Lionas, T. Georgakopoulos, N. Todorova, S. Karapati, K. Pomoni, C. Trapalis Surface modified nanoparticles of P25 Evonik Degussa TiO2 with silane coupling agent 3-(2-aminoethylamino) propyltrimethoxysilane (AAPTMS) were prepared at low temperature conditions. The samples were characterized using the BET technique. Their temperature dependent dc electrical conductivity was investigated in the temperature range 195–440
15 August 2018
Neodymium doped TiO2 nanoparticles by sol-gel method for antibacterial and photocatalytic activity
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): N. Nithya, G. Bhoopathi, G. Magesh, C. Daniel Nesa Kumar In the present study, TiO2 and Nd doped TiO2 nanoparticle was synthesized through Sol-gel method with different molar ratio and different starting material. The synthesized nanoparticle was characterized by XRD, UV-Vis, PL, FE-SEM, HR-TEM, and EDS analysis. The X-ray diffraction pattern confirms tetragonal anatase phase with average crystallite size of 14–10

Facile wet chemical synthesis of Er3+/Yb3+ co-doped BaSnO3 nano-crystallites for dye-sensitized solar cell application
Publication date: 15 August 2018
Source:Materials Science in Semiconductor Processing, Volume 83 Author(s): Astakala Anil Kumar, Jashandeep Singh, Deepak Singh Rajput, Astrid Placke, Ashok Kumar, Jitendra Kumar We report synthesis of pure and rare earth ion Er3+ /Yb3+ co-doped barium stannate (BaSnO3) nano-crystallites by facile wet chemical route. The nano-crystallites at the Ba2+ lattice site substitution of 0.1 and Er/Yb ratio of 0.00, 0.11, 0.18 and 0.25 exhibited band gap of 3.64, 3.66, 3.67 and 3.68
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